IXFH30N50 |
RFQ for IXFH30N50 Required Field |
 |
| Technical/Catalog Information | IXFH30N50 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 5700pF @ 25V |
| Power - Max | 360W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 300nC @ 10V |
| Package / Case | TO-247AD |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFH30N50 IXFH30N50 |
| Product | Manufacturers | Pack | D/C |
| IXFH30N50 | - | TO | - |
Typical Application |
Features |
| • DC-DC converters• Battery chargers• Switched-mode and resonant-mode power supplies• DC choppers• AC motor control• Temperature and lighting controls | • International standard packages• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive Switching (UIS) rated• Low package inductance - easy to drive and to protect• Fast intrinsic Diode |
|
Symbol |
Test conditions |
Maximum |
ratings |
|
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
500 500 |
V V |
|
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
|
ID25 IDM IAR |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
30N5030 32N5032 30N50120 32N50128 30N5030 32N5032 |
A A A A A A |
|
EAS EAR |
TC = 25°C TC = 25°C |
1.5 35 |
J mJ |
|
dv/dt |
IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2 |
5 |
V/ns |
|
PD |
TC = 25°C |
315 |
W |
|
TJ TJM Tstg |
-55 ... +150
150 -55 ... +150 SupplierPost a Buying LeadPDF / DatasheetRelated PDFRelated Models |
